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  tec magna magnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 BUZ900P buz901p v dsx drain C source voltage v gss gate C source voltage i d continuous drain current i d(pk) body drain diode p d total power dissipation @ t case = 25c t stg storage temperature range t j maximum operating junction temperature r q jc thermal resistance junction C case 14v 8a 8a 125w C55 to 150c 150c 1.0c/w mechanical data dimensions in mm (inches) 1 3 2 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) bsc 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) max. 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) bsc 2.87 (0.113) 3.12 (0.123) nCchannel power mosfet features ? high speed switching ? nCchannel power mosfet ? semefab designed and diffused ? high voltage (160v & 200v) ? high energy rating ? enhancement mode ? integral protection diode ? pCchannel also available as buz905p & buz906p pin 1 C gate toC247 pin 2 C source pin 3 C drain absolute maximum ratings (t case = 25c unless otherwise stated) power mosfets for audio applications BUZ900P 160v buz901p 200v
tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 b uz900p b uz901p characteristic t est conditions min. t yp. max. unit bv dsx drain C source breakdown voltage bv gss gate C source breakdown voltage v gs(off) gate C source cutCoff voltage v ds(sat) * drain C source saturation voltage i dsx drain C source cutCoff current yfs* forward transfer admittance 160 200 14 0.15 1.5 12 10 10 0.7 2 * pulse test: pulse width = 300 m s , duty cycle 2%. v gs = C10v BUZ900P i d = 10ma buz901p v ds = 0 i g = 100 m a v ds = 10v i d = 100ma v gd = 0 i d =8a v ds = 160v BUZ900P v gs = C10v v ds = 200v buz901p v ds = 10v i d = 3a v v v v ma s characteristic t est conditions min. t yp. max. unit c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t on turnCon time t off turn-off time 500 300 10 100 50 v ds = 10v f = 1mhz v ds = 20v i d = 5a pf ns st a tic chara cteristics (t case = 25c unless otherwise stated) d ynamic chara cteristics (t case = 25c unless otherwise stated) 0 25 50 75 100 125 150 0 25 50 75 100 125 150 t case temperature (?c) c c h a n n e l d i s s i p a t i o n ( w ) derating chart
0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 6 7 8 9 p = 1 2 5 w c h i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds c t = 75?c 6v 5v 4v 3v 2v typical output characteristics tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 b uz900p b uz901p 0 2 4 6 8 10 12 14 0 2 4 6 8 10 v gate C source voltage (v) gs v d r a i n C s o u r c e v o l t a g e ( v ) d s t = 25?c c i = 6a d i = 3a d i = 1a d drain C source voltage vs gate C source voltage 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 i d r a i n c u r r e n t ( a ) d v gate C source voltage (v) gs v = 10v ds t = 100?c c t = 25?c c t = 75?c c typical transfer characteristics 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 6 7 8 9 p = 1 2 5 w c h i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds t = 25?c c 6v 5v 4v 3v 2v 1 10 100 1000 0.01 0.1 1 10 i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds 1 6 0 v 2 0 0 v d c o p e r a t i o n t = 25?c c buz900 buz901 0 1 2 3 4 5 6 7 8 0.1 1 10 100 g t r a n s c o n d u c t a n c e ( s ) f s i drain current (a) d t = 25?c c t = 75?c c v = 20v ds typical output characteristics forward bias safe operating area transconductance


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